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JEDEC publishes document for bias temperature instability of SiC MOS devices

The JEDEC Solid State Technology Association (which develops standards for the microelectronics industry) has published ‘JEP184: Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor (MOS) Devices for Power Electronic Conversion’. Developed by JEDEC’s JC-70.2 Silicon Carbide Subcommittee, JEP184 is available for free download from the JEDEC website...
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